| PART |
Description |
Maker |
| PBHV8115Z |
1A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV8115T215 |
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PMBTA45 |
150 MA NPN High-voltage Low VCEsat (BISS) Transistor
|
Philips Semiconductors
|
| PBHV9050T |
150mA PNP high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV8115Z08 |
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV9215Z115 |
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
| PBHV8540T09 |
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV8118T |
180 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor
180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
| PBSS2515M PBSS2515M315 |
15 V. 0.5 A NPN low VCEsat (BISS) transistor
15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
